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35 GHz ft and 26 GHz fmax GaInP/GaAs heterojunction bipolar transistors

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6 Author(s)
Prasad, S.J. ; Electron. Res. Labs., Tektronix, Beaverton, OR, USA ; Haynes, C. ; Vetanen, B. ; Park, S.
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High gain ( beta =175)3*10 mu m2 GaInP/GaAs HBTs fabricated using a triple mess etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 mu A. Microwave measurements indicate the devices have 35 GHz ft and 26 GHz fmax.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 25 )

Date of Publication:

3 Dec. 1992

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