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Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride

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6 Author(s)
Goswami, R. ; Microelectron. Centre, Middlesex Polytech., London, UK ; Butcher, J.B. ; Ginige, R. ; Zhang, J.F.
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Silicon nitrides, deposited on silicon by PECVD using an SiH4 /NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits

Published in:

Electronics Letters  (Volume:24 ,  Issue: 20 )

Date of Publication:

29 Sep 1988

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