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1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

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8 Author(s)

1.5 μm band GaInAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised

Published in:

Electronics Letters  (Volume:24 ,  Issue: 16 )

Date of Publication:

4 Aug 1988

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