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Browse Journals & Magazines > Electronics Letters ...> Volume:24 Issue:16 Help

CMOS compatible, self-biased bipolar transistor aimed at detecting maximum temperature in a silicon integrated circuit

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5 Author(s)
Bafleur, M. ; LAAS du CNRS., Toulouse. ; Buxo, J. ; Sarrabayrouse, G. ; Millan, J.
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A new bipolar device, fully CMOS compatible, that properly detects and amplifies the leakage current of a reverse-biased bulk junction is presented. The amplification factor is the current gain hFE of the bipolar transistor which is maximised and independent of all spurious and less reproducible surface and space-charge recombination mechanisms

Published in:
Electronics Letters  (Volume:24 ,  Issue: 16 )

Date of Publication: 4 Aug 1988

Page(s):
1022 - 1024
ISSN :
0013-5194
INSPEC Accession Number:
3231384
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
4 Aug 1988
Sponsored by :
Institution of Engineering and Technology

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