Referenced Items are not available for this document.
GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on grooved substrates. The carrier confinement and the real-index waveguiding in these lasers rely on lateral thickness variations in the quantum well active layer. Very low threshold currents, as low as 1.8 mA for uncoated devices at room temperature, with 63% differential efficiency have been obtained
Published in:
Electronics Letters
(Volume:24
,
Issue:
16
)
Date of Publication: 4 Aug 1988
- Page(s):
- 985 - 986
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3231362
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 4 Aug 1988
- Sponsored by :
- Institution of Engineering and Technology
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