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A bipolar ECL static RAM using polysilicon-diode loaded memory cell

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8 Author(s)

A 1 K*1 bipolar ECL (emitter-coupled logic) static RAM using polysilicon-diode loaded memory cell is realized in a single-poly bipolar process technology. The use of the polysilicon diode as the load element for the memory cell is made possible by the fact that its I-V characteristics exhibit an ideality factor of two. The hold voltage for the memory cell is larger than 240 mV over a wide range of cell currents with the lower bound residing in the submicroampere range. Results show extremely stable operation against row-select sensitivity. A 1.5-ns row address access time has been obtained from the test circuit.<>

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Solid-State Circuits, IEEE Journal of  (Volume:24 ,  Issue: 2 )