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Very high gain Nd:YLF amplifiers

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5 Author(s)
Knights, M.G. ; Sanders Associates, Nashua, NH, USA ; Thomas, M.D. ; Chicklis, E.P. ; Rines, G.A.
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High-gain Nd:YLF rod amplifiers in which single-pass, small signal gains of over 1700 have been obtained along with stored energy densities >or=0.4 J/cm/sup 2/ are discussed. The ability of Nd:YLF amplifiers to support such gains is a result of high parasitic oscillation thresholds, due primarily to the low refractive index of the material. These results suggest that Nd:YLF is an excellent candidate for amplifiers where high specific stored energies and/or very high gains are required.<>

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 5 )

Date of Publication:

May 1988

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