The authors describe a procedure to design a test structure including the adaptation of the measurement equipment to obtain significant statistical data about the density, causes, sizes, and outlines of random defects, which can cause short circuits in a two-metal-layer process. The test structure will be manufactured side by side with standard chips and will be measured with exactly the same electrical test equipment as standard chips. The analysis of the data results in the detection and identification of random defects, and also the possibility of fixing the position of these defects inside the test chip, which facilitates an additional optical measurement for determining the causes, sizes, and outlines of the defects
Published in:
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Date of Conference: 16-19 Mar 1992