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High voltage, new driver IC technique based on silicon wafer direct-bonding (SDB)

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4 Author(s)
A. Nakagawa ; Toshiba Corp., Kawasaki, Japan ; K. Watanabe ; Y. Yamaguchi ; T. Tsukakoshi

Two fundamental techniques are presented for high-voltage driver ICs: dielectric isolation based on silicon wafer direct-bonding (DISDB) and a high-voltage junction termination technique (SIPOS resistive field plate). The SIPOS plate shields the external electric field influence on breakdown voltage. DISDB integrates low-voltage logic and high-voltage (500 V) devices and has three structural variations corresponding to different application fields.<>

Published in:

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Date of Conference:

11-14 April 1988