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Current-drive enhancement limited by carrier velocity saturation in deep-submicrometer fully depleted SOI MOSFETs

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2 Author(s)
J. G. Fossum ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; S. Krishnan

Simulations and measurements of SOI MOSFETs are presented with analytical insight to reveal the severe limitation of current-drive enhancement caused by carrier velocity saturation in the deep-submicrometer fully depleted device. For L=0.1 μm, the enhancement, which tends to result from the suppressed body charge and electric field in the thin-film device, is virtually negated by the velocity saturation driven by the high longitudinal electric field

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 2 )