By Topic

Surface passivation of backside-illuminated indium antimonide focal plane array

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
I. Bloom ; Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; Y. Nemirovsky

A novel surface passivation tailored to a two-dimensional array of small-area, gate-controlled InSb photovoltaic diodes fabricated on etch-thinned bulk InSb wafers, with backside illumination, is presented. The surface passivation is based on a controlled surface treatment that reduces the native oxide and is followed by photon-assisted deposition of SiOx. Thinned bulk n-type InSb with (111) orientation forms two distinctive types of interface on the In and Sb faces, respectively. The In face forms an accumulated interface with reduced surface recombination velocity. The Sb face forms a slightly accumulated interface, with a relatively small concentration of fast and slow surface states. The current-voltage and differential resistance-voltage characteristics of implanted p+-n photodiodes exhibit nearly flat behavior up to 1-V reverse bias with reduced leakage currents. The Ro×A product of small-geometry diodes is 5×104 Ω-cm2 at 77 K

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 2 )