By Topic

A comparison of cleaning procedures for removing potassium from wafers exposed to KOH

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Aslam ; Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA ; B. E. Artz ; S. L. Kaberline ; T. J. Prater

Silicon, oxidized silicon, and silicon nitride on silicon wafers were exposed to KOH etchant. Three cleaning procedures were used and the remaining surface potassium measured by C-V and SIMS techniques. Bare silicon appears to be the most difficult to clean, followed by oxide, and then nitride. The cleaning procedures appear to be equally effective

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 2 )