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A comparison of cleaning procedures for removing potassium from wafers exposed to KOH

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4 Author(s)
Aslam, M. ; Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA ; Artz, B.E. ; Kaberline, S.L. ; Prater, T.J.

Silicon, oxidized silicon, and silicon nitride on silicon wafers were exposed to KOH etchant. Three cleaning procedures were used and the remaining surface potassium measured by C-V and SIMS techniques. Bare silicon appears to be the most difficult to clean, followed by oxide, and then nitride. The cleaning procedures appear to be equally effective

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 2 )