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Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP

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7 Author(s)
M. Renaud ; Alcatel Alsthom Recherche, Marcoussis, France ; J. F. Vinchant ; P. Jarry ; J. Le Bris
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Monolithic integration of two optical switches consisting in carrier depletion directional couplers based on GaInAsP/InP double heterostructure waveguides, with two GaInAs p-i-n detectors has been realized on semi-insulating InP. Packaged devices based on 2 mm coupling length directional couplers exhibit a switching voltage of -15 V and a 3 dB cutoff frequency of 1.3 GHz. Also, total fiber-to-fiber insertion loss of only 16 dB is achieved without any antireflection coating.<>

Published in:

IEEE Photonics Technology Letters  (Volume:4 ,  Issue: 12 )