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Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

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9 Author(s)
Yellen, S.L. ; McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA ; Shepard, A.H. ; Harding, C.M. ; Baumann, J.A.
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Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mu m are shown to exhibit resistance to

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 12 )