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Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers

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2 Author(s)
Takagi, Takeshi ; OMRON Corp., Kyoto, Japan ; Iga, K.

A GaAs/AlGaAs laser loaded by a multiquantum barrier (MQB) is reported, and its temperature-threshold characteristic has been systematically examined. It has been found that this characteristic is improved by introducing the MQB, and this improvement is reflected in the barrier height. The actual barrier heights of a MQB-loaded structure under biased conditions are also discussed, considering the Fermi level in the MQB region.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 12 )