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Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements

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7 Author(s)
Zou, Y. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Osinski, J.S. ; Grodzinski, P. ; Dapkus, P.D.
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Recombination processes, gain, and loss have been comparatively studied in both strained and lattice-matched 1.5- mu m semiconductor quantum-well lasers using differential carrier lifetime techniques and other measurements. For the first time, some predicted strain benefits to 1.5- mu m semiconductor lasers have been verified, including (i) the reduction of the Auger recombination rate in devices with both 0.9% and 1.8% compressive strain; and (ii) a 33% reduction of transparency carrier density in lasers with 0.9% strain compared to lattice-matched lasers. The authors, however, did not observe an increase of the differential gain in strained devices as predicted.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 12 )