By Topic

Low threshold current 1.5- mu m buried heterostructure lasers using strained quaternary quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Osinski, J.S. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Grodzinski, P. ; Zou, Y. ; Dapkus, P.D.
more authors

Buried heterostructure lasers operating at a wavelength of 1.5 mu m with four compressively strained quaternary quantum wells (strain approximately 1.8%, thickness approximately 90 AA) and current blocking layers were made using atmospheric pressure metalorganic chemical vapor deposition. Pulsed room-temperature threshold currents for uncoated devices as low as 4.1 mA and as low as 0.8 mA for devices with high reflectivity mirror coatings are reported. The dependence of threshold current on active region width is consistent with broad-area laser measurements.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 12 )