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An improved analytical short-channel MOSFET model valid in all regions of operating for analog/digital circuit simulation

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3 Author(s)
Chow, H.-C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Feng, W.-S. ; Kuo, J.B.

An improved analytical model for short-channel MOSFETs which is valid in all regions of operation with both the continuous drain current and the output conductance by introducing a source-drain series resistance dependent scaling factor is proposed for analog/digital circuit simulation. This model considers all second-order effects for an accurate determination of the pinchoff point location without internal numerical iterations. Comparisons with experimental data for submicron devices confirm the model validity. Furthermore, a simple interpolation is also presented to maintain the continuous slope of the output conductance and its effect on the drain current is demonstrated to be acceptable

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:11 ,  Issue: 12 )