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Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models

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7 Author(s)
M. Schlechtweg ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; W. Reinert ; P. J. Tasker ; R. Bosch
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An accurate database for active and passive MMIC components valid up to millimeter-wave frequencies has been established. The CAE models for the transistors and the passive CPW-components; which include the coplanar T-junction, are derived from on-wafer S-parameter measurements up to 63 GHz. For noise modeling of the MODFETs up to millimeter-wave frequencies, an approach based on the temperature noise model reported by M.W. Pospiezalski (1989) has been used. The parameter Td, which is required for the temperature model, is extracted from on-wafer noise parameter measurements up to 18 GHz. Using this database, the authors have designed and fabricated low-noise V -band two-stage amplifiers, using pseudomorphic MODFETs on a GaAs substrate, which have a performance of 10.5-dB gain and 5.2-dB noise figure at 58.5 GHz. Very good agreement between simulated and measured MMIC gain and noise performance is achieved up to V-band

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IEEE Transactions on Microwave Theory and Techniques  (Volume:40 ,  Issue: 12 )