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A new empirical nonlinear model for HEMT and MESFET devices

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3 Author(s)
Angelov, I. ; Dept. of Appl. Electron Phys., Chalmers Univ. of Technol., Goteborg, Sweden ; Zirath, H. ; Rosman, N.

A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different δ-doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:40 ,  Issue: 12 )