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High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates

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4 Author(s)
D. L. Rogers ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; J. M. Woodall ; G. D. Pettit ; D. McInturff

High-speed interdigitated metal-semiconductor-metal detectors have been fabricated on non-lattice-matched, semi-insulating, GaAs substrates using two GaInAs layers of differing indium concentrations to accommodate most of the lattice mismatch by interface misfit dislocations. Bandwidths as high as 3 GHz were measured with none of the detrimental low-frequency gain usually observed in this type of device. This is attributed to the inhibition of the surface trapping of photoinduced carriers by a graded pseudomorphic layer at the surface.<>

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 10 )