By Topic

High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rogers, D.L. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Woodall, J.M. ; Pettit, G.D. ; McInturff, D.

High-speed interdigitated metal-semiconductor-metal detectors have been fabricated on non-lattice-matched, semi-insulating, GaAs substrates using two GaInAs layers of differing indium concentrations to accommodate most of the lattice mismatch by interface misfit dislocations. Bandwidths as high as 3 GHz were measured with none of the detrimental low-frequency gain usually observed in this type of device. This is attributed to the inhibition of the surface trapping of photoinduced carriers by a graded pseudomorphic layer at the surface.<>

Published in:

Electron Device Letters, IEEE  (Volume:9 ,  Issue: 10 )