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Drain contact boundary specification in windowed Monte-Carlo device analysis

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4 Author(s)
D. Y. Cheng ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; K. Wu ; C. G. Hwang ; R. W. Dutton

To accurately analyze hot-carrier transport in a reasonable CPU time, a device analysis algorithm has been developed to couple the drift-diffusion model and the Monte Carlo (MC) method. In this algorithm, since the MC method is applied only in a portion of the device which is called the window, where to place the window boundaries in the device is extremely important for accurate simulations. To overcome the difficulties of window drain contact specification, the criterion of equivalent current collection has been defined, and an expression for calculating the drain contact length has been derived. The approach has been verified by good agreement between the simulation results and the experimental measurements.<>

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 10 )