By Topic

Resistivity, adhesive strength, and residual stress measurements of thin film metallizations on single crystal quartz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Vianco, P.T. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Conley, W.R. ; Panitz, J.K.G.

A study of resistivity, adhesive strength, and residual stress measurements which were made on 450 Å Cr/1800 Å Au and 450 Å Mo/1800 Å Au thin films deposited on optically polished, z-plate single crystal quartz surfaces is discussed. The films were analyzed after deposition and following annealing at 380°C or 450°C for 30 min in either air or vacuum. The resistivity of the Cr/Au film increased by 1090% and 1780% after vacuum annealing at 390°C and 450°C, respectively. These increases were reduced when 1000 Å of Ni or Mo were introduced as barrier layers between the Cr and Au to prevent interdiffusion of the two layers. The resistivity of the Mo/Au films remained unchanged after all annealing exposures. The Cr/Au, Cr/Mo/Au, and Cr/Ni/Au films had adhesion strengths of 41 to 70 MPa in both the as-deposited and annealed conditions. The adhesive strength of the Mo/Au metallization was 23 to 31 MPa except after the 450°C air anneal, where the value dropped to zero. The residual stress of the as-deposited Cr/Au films was 170 MPa (tensile) but became compressive at -120 to -250 MPa after annealing. The Mo/Au metallization was deposited with a zero stress value that also became compressive at -140 to -180 MPa

Published in:

Frequency Control, 1990., Proceedings of the 44th Annual Symposium on

Date of Conference:

23-25 May 1990