By Topic

An enhanced SPICE MOSFET model suitable for analog applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. A. Power ; Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland ; W. A. Lane

A MOSFET model optimized for analog circuit simulation is presented and shown to agree with measured device characteristics, especially device output conductance and transconductance, over a wide range of operation. The widely used SPICE Level 3 (MOS3) model equations were utilized as a starting point in the model development process. The enhanced model (NMOD) exhibits smooth and continuous transitions in the weak to strong inversion region, and in the region between linear and saturation modes of device operation. These smooth transitions improve both the model's current and conductance prediction accuracy, as well as its convergence properties when used in circuit simulation. This is made possible because a single current equation is utilized for all regions of device operation. The NMOD model accurately characterizes devices over a wide range of geometries, achieving, for example, 1.3% and 4.2% average errors between measured and model IDS and gds characteristics, respectively, for a 20/1.3-μm p-channel device over a 5-V bias range

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:11 ,  Issue: 11 )