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Electrical measurement of the junction temperature of an RF power transistor

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3 Author(s)
B. M. Cain ; Telecommun. Res. Lab., Edmonton, Alta., Canada ; P. A. Goud ; C. G. Englefield

An enhanced electrical method is presented for measuring the average junction temperature of an RF bipolar transistor. A two-step procedure, previously developed for DC operation, is extended to include the junction temperature measurement for an RF power transistor in a tuned amplifier circuit. The measurement technique is convenient, since it can be used with normal, packaged devices, and does not require a complex heat flow model or ambient temperature measurements

Published in:

IEEE Transactions on Instrumentation and Measurement  (Volume:41 ,  Issue: 5 )