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Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

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9 Author(s)
Grider, D.E. ; Honeywell Syst. & Res. Center, Bloomginton, MN, USA ; Akinwande, A.I. ; Mactaggart, R. ; Ruden, P.P.
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A complementary heterostructure insulated gate field effect transistor (c-HIGFET) technology has been developed which is capable of operating at high speeds with very low static power dissipation. Ring oscillator circuits fabricated using this 1 mu m gate length C-HIGFET technology exhibited very low power dissipation values of down to 67 mu W/gate while maintaining gate delays of approximately 200 ps. In addition, speed-power products of less than 6 fJ have been obtained using these C-HIGFET ring oscillators. The C-HIGFET technology has been used to fabricate 1 kb static random access memories (SRAMs) with yields of over 26% on a 3-inch wafer. Read access times as low as 1.8 ns were obtained for 1 K SRAMs at a power of 650 mW. The 1 K SRAM exhibited a significant reduction in power to 90 mW at a somewhat longer read access time of 4.4 ns.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Date of Conference:

7-10 Oct. 1990