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A proposed magnetically enhanced reactive ion etcher for ULSI

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5 Author(s)

An ultraclean (UC) magnetically enhanced reactive ion etcher (MERIE) is proposed to overcome the limitations of the present-state MERIE available commercially. The sensitivity of gas compositions, pumping speed, substrate temperature and magnetic field intensity are discussed as examples of hardware-related process limitations. Five major configuration changes are proposed in the system: (1) improved effective pumping speed; (2) supplementary magnets for uniform and stable plasma distribution; (3) dual RF excitation for independent control of ion energy and flux; (4) DC-biased shield electrode for minimum chamber material contamination; and (5) DC-biased substrate. A study with a dual RF excitation system found that DC-baising the Si substrate in low-energy SiO2 etching process can significantly reduce the Si etching rate by impeding positive ions from reaching the substrate. In addition, SiO2 to Si etching rate selectivity can be significantly improved during the overetch step in SiO2 etching of high-aspect-ratio contact holes

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:5 ,  Issue: 4 )