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GaAs power MESFET performance sensitivity to profile and process parameter variations

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3 Author(s)
Trew, R.J. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Yan, J.B. ; Stoneking, D.E.

Large-signal performance sensitivities for power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo conducting-channel doping profiles are calculated and compared. The large-signal sensitivities of the RF power and power-added efficiency are determined for the device designs as a function of variations in various process-dependent parameters. It is demonstrated that the channel doping profile and breakdown voltage have the most significant influence on large-signal RF performance.<>

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:36 ,  Issue: 12 )