GaAs power MESFET performance sensitivity to profile and process parameter variations

Large-signal performance sensitivities for power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo conducting-channel doping profiles are calculated and compared. The large-signal sensitivities of the RF power and power-added efficiency are determined for the device designs as a function of variations in various process-dependent parameters. It is demonstrated that the channel doping profile and breakdown voltage have the most significant influence on large-signal RF performance.<
>