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Effect of 1/f-type FM noise on semiconductor-laser linewidth residual in high-power limit

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1 Author(s)
K. Kikuchi ; Dept. of Electron. Eng., Tokyo Univ., Bunkyo, Japan

The FM-noise spectrum and the linewidth of 1.3 μm DFB (distributed feedback) semiconductor lasers measured in the high-power state up to 20 mW are discussed. A 5-MHz residual linewidth is observed in the high-power limit. The FM-noise spectrum consists of white noise and 1/f noise. The spectral density of the white noise is reduced by the increase in the output power, whereas that of the 1/f noise is unchanged, which means that the linewidth residual in the high-power limit is caused by the 1/f noise rather than the white noise. The impact of the 1/f-type FM noise on coherent optical communication systems is also discussed

Published in:

IEEE Journal of Quantum Electronics  (Volume:25 ,  Issue: 4 )