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Development of bulk GaAs room temperature radiation detectors

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4 Author(s)
McGregor, D.S. ; Dept. of Nucl. Eng., Michigan Univ., Ann Arbor, MI, USA ; Knoll, G.F. ; Eisen, Y. ; Brake, R.

Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed nonuniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal. Pulse height spectra measured from a 241Am alpha particle source at room temperature resulted in resolution ranging from 2.2% to 3.1% at FWHM for several detectors with a typical resolution of 2.5%. Low energy gamma rays measured under room temperature operating conditions resulted in observed full energy peaks of 60 keV and 122 keV photons with measured FWHMs of 22 keV and 40 keV, respectively

Published in:

Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 5 )

Date of Publication:

Oct 1992

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