A 16-channel CMOS neural stimulating array

A probe designed for the highly selective long-term stimulation of neuronal assemblies in the central nervous system is described. The micromachined multishank probe incorporates CMOS circuitry to control the output current on 16 iridium oxide (IrO) electrode sites. Serial site addresses and current amplitude data are loaded into the probe at 4 MHz and converted to analog stimulus currents. The probe circuitry dissipates only 80 mu W from +or-5-V supplies when not delivering stimulus currents and uses five external leads. It permits the IrO sites to be activated by voltammetry from off-chip, provides per-channel pulse time-outs to prevent accidental overstimulation of the tissue, and signals the external world, using a status bit, in the event of certain trouble conditions. The stimulating site impedances and the stimulus currents can be measured from off chip on demand. The circuitry is implemented in a single-metal, single-poly, CMOS process with 3- mu m minimum features using 7100 transistors in an area of 11 mm/sup 2/.<
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