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Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548 nm. The optimum annealing temperature is determined to be 1175 degrees C yielding lifetimes up to 7 ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.
Date of Publication: 19 Nov. 1992