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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:24 Help

Low-energy erbium implanted Si3N4/SiO2/Si waveguides

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6 Author(s)
Lumholt, O. ; Tech. Univ. of Denmark, Lyngby, Denmark ; Bernas, H. ; Chabli, A. ; Cahumont, J.
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Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548 nm. The optimum annealing temperature is determined to be 1175 degrees C yielding lifetimes up to 7 ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 24 )

Date of Publication: 19 Nov. 1992

Page(s):
2242 - 2243
ISSN :
0013-5194
INSPEC Accession Number:
4311965
Digital Object Identifier :
10.1049/el:19921441
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
19 Nov. 1992
Sponsored by :
Institution of Engineering and Technology

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