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Electrical properties of ZrO2 thin film prepared by sol-gel method

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4 Author(s)
Yoshimura, N. ; Dept. of Electr. Eng., Min. Coll., Akita Univ., Japan ; Itoi, M. ; Sato, S. ; Taguchi, H.

ZrO2 thin films were prepared by the sol-gel method using metal alkoxide (Zr(O-n-Bu)4). These films were monoclinic crystalline phase ZrO2, which cannot be prepared by general methods. The electrical properties of ZrO2 thin film show good electrical insulation. The ZrO2 thin film is expected to serve as capacitor and coating for insulating film

Published in:

Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on

Date of Conference:

8-12 Jul 1991