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Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

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7 Author(s)
Djie, H.S. ; Electr. & Comput. Eng. Dept, Lehigh Univ., Bethlehem, PA ; Yang Wang ; Ooi, B.S. ; Dong-Ning Wang
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We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced

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Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 22 )