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A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS

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7 Author(s)
Chieh-Pin Chang ; Inst. of Microelectron., Nat. Cheng-Kung Univ., Tainan ; Jian-An Hou ; Jionguang Su ; Chih-Wei Chen
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A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and plusmn4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 11 )