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High-Field Degradation of Poly-Si Gate p-MOS and n-MOS Devices With Nitrided Oxides

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5 Author(s)
Krause, G. ; Inst. of Electron. Mater. & Devices, Hannover Univ. ; Beug, M.F. ; Ferretti, R. ; Prasad, S.
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In this paper, the authors investigate polysilicon gate MOS capacitors and MOSFET devices with nitrided oxides. These devices are known to also show a strong negative bias temperature instability (NBTI) effect. The authors analyze the dependence of oxide-trap generation in p-channel and n-channel devices on negative and positive Fowler-Nordheim (FN) charge injection stress by application of various C-V and charge pumping (CP) measurement methods yielding information on traps at different oxide locations. In the case of p-channel devices, a strong evidence for a preexistent very high oxide-trap concentration near the gate already before stress application is obtained. This feature is accompanied by a fast degradation of the p-channel devices under a negative bias stress similar to NBTI degradation. The CP measurements, which, in contrast to classical methods, are able to distinguish between actually fast interface traps and the slower near-interface oxide traps (NIOTs), showed that in all devices, a stress polarity dependence of trap generation occurs only for NIOTs and not for interface traps

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 3 )

Date of Publication:

Sept. 2006

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