By Topic

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
C. C. Cheng ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; J. F. Lin ; T. Wang ; T. H. Hsieh
more authors

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it) and bulk oxide charge Qox creation in the channel and in the drift regions separately. The growth rates of Nit and Qox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum Ig stress causes the largest drain current and subthreshold slope degradation because of both Nit generation in the channel and Qox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:6 ,  Issue: 3 )