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Characterization of Total Safe Operating Area of Lateral DMOS Transistors

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2 Author(s)

The total safe operating area (SOA) of LDMOS transistors is discussed. It is shown that the transistors are subjected to different kinds of stresses, yielding a combination of electrical and thermal degradation and/or failure modes. A methodology to build the total SOA for LDMOS transistors is highlighted and is experimentally verified on a 40-V LDMOS implemented in a

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Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 3 )