We describe the fabrication of short channel (10nm-15nm) ferromagnetically contacted individual single-walled nanotube devices for spin electronic applications. We observe a hysteretic magnetoresistance indicative of spin transport in several nanotube devices with a maximum resistance change of +15 to -10%. The sign and magnitude of the magnetoresistance can be controlled through the bias on a capacitively coupled gate. Our experiments suggest that the short channel contacting technique provides improved yield over devices having longer contact separations.
Published in:
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
(Volume:2
)
Date of Conference: 17-20 June 2006