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We describe the fabrication of short channel (10nm-15nm) ferromagnetically contacted individual single-walled nanotube devices for spin electronic applications. We observe a hysteretic magnetoresistance indicative of spin transport in several nanotube devices with a maximum resistance change of +15 to -10%. The sign and magnitude of the magnetoresistance can be controlled through the bias on a capacitively coupled gate. Our experiments suggest that the short channel contacting technique provides improved yield over devices having longer contact separations.