By Topic

A Study of the Performance of Ballistic Nanoscale MOSFETS Using Classical and Quantum Ballistic Transport Models

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. A. Ahmadain ; Department of Electrical and Computer Engineering and Computer Science, University of Cincinnati, Cincinnati, OH, USA, ; K. P. Roenker ; K. A. Tomko

Using the nanoMOS 2.5 simulator, we study the impact of varying the channel length, gate oxide thickness and dielectric constant, drain voltage, and temperature on the performance of a ballistic nanoscale MOSFET using quantum ballistic and classic ballistic transport models. Our key results show that the quantum ballistic (QB) transport model typically predicts a lower on-state current compared to the classical ballistic (CB) model except for a 5nm channel length where source-to-drain tunneling contributes approximately 35% to the on-state current. We also show that the off-state current is significantly affected by the gate oxide thickness, whereas the influence of varying the oxide dielectric constant on the off-state current was not as pronounced for a 1.5nm oxide thickness. Finally, we show that room temperature operation (T=300K) leads to an excessively high off-state current and a degraded subthreshold slope. For low temperatures, (T=100K), the QB and CB models predicts a seven orders of magnitude difference in the off-state current.

Published in:

2006 Sixth IEEE Conference on Nanotechnology  (Volume:1 )

Date of Conference:

17-20 June 2006