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A Study of the Performance of Ballistic Nanoscale MOSFETS Using Classical and Quantum Ballistic Transport Models

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3 Author(s)
Ahmadain, A.A. ; Department of Electrical and Computer Engineering and Computer Science, University of Cincinnati, Cincinnati, OH, USA, ahmadaaa@ececs.uc.edu ; Roenker, K.P. ; Tomko, K.A.

Using the nanoMOS 2.5 simulator, we study the impact of varying the channel length, gate oxide thickness and dielectric constant, drain voltage, and temperature on the performance of a ballistic nanoscale MOSFET using quantum ballistic and classic ballistic transport models. Our key results show that the quantum ballistic (QB) transport model typically predicts a lower on-state current compared to the classical ballistic (CB) model except for a 5nm channel length where source-to-drain tunneling contributes approximately 35% to the on-state current. We also show that the off-state current is significantly affected by the gate oxide thickness, whereas the influence of varying the oxide dielectric constant on the off-state current was not as pronounced for a 1.5nm oxide thickness. Finally, we show that room temperature operation (T=300K) leads to an excessively high off-state current and a degraded subthreshold slope. For low temperatures, (T=100K), the QB and CB models predicts a seven orders of magnitude difference in the off-state current.

Published in:

Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on  (Volume:1 )

Date of Conference:

17-20 June 2006

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