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High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition

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4 Author(s)
K. H. Chung ; Princeton Institute of Science and Technology of Materials (PRISM) and Dept. of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA. Phone: 1-609-258-6624 E-mail: ; J. C. Sturm ; E. Sanchez ; S. Kuppurao

The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported. The high growth rates are enabled by a novel high-order silane (HOS) silicon precursor

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006