IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Conference Publications > SiGe Technology and Device Me ... Help

High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chung, K.H. ; Dept. of Electr. Eng., Princeton Univ., NJ ; Sturm, J.C. ; Sanchez, E. ; Kuppurao, S.

The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported. The high growth rates are enabled by a novel high-order silane (HOS) silicon precursor

Published in:
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference: 15-17 May 2006

Page(s):
1 - 2
Print ISBN:
1-4244-0461-4
INSPEC Accession Number:
9026580
Conference Location :
Princeton, NJ
Digital Object Identifier :
10.1109/ISTDM.2006.246523

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.