By Topic

High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
K. H. Chung ; Princeton Institute of Science and Technology of Materials (PRISM) and Dept. of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA. Phone: 1-609-258-6624 E-mail: kchung@princeton.edu ; J. C. Sturm ; E. Sanchez ; S. Kuppurao

The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported. The high growth rates are enabled by a novel high-order silane (HOS) silicon precursor

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006