Effective Surface Treatments for Selective Epitaxial SiGe Growth in Locally Strained pMOSFETs

Cyclical wet clean in DI-O
₃
/SC1/DHF and low temperature bake in HCl/H
₂
are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for device structures under limited chemical and thermal budgets