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Effective Surface Treatments for Selective Epitaxial SiGe Growth in Locally Strained pMOSFETs

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14 Author(s)
Chin-I Liao ; United Microelectronics Corp., No 18, Nanke 2nd Rd. Tainan Science Park, Sinshih Township, Tainan County, 741, Taiwan, R.O.C. ; Yi-Cheng Chen ; Po-Lun Cheng ; Hsiang-Ying Wang
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Cyclical wet clean in DI-O3/SC1/DHF and low temperature bake in HCl/H2 are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for device structures under limited chemical and thermal budgets

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2006 International SiGe Technology and Device Meeting

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