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Fabrication of Ge-dots/Si Multilayered Structures by Combination of Low-Pressure CVD and Ni-Induced Lateral Crystallization

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9 Author(s)
Shi, Y. ; Key Lab. of Photonic & Electron. Mater., Nanjing Univ. ; Yan, B. ; Pu, L. ; Zhang, K.J.
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Self-assembled Ge quantum dots have attracted a great deal of interests for the realization of silicon- based quantum electronic and optoelectronic devices, such as mid-infrared quantum dot photodetectors, laser, resonant tunnelling diodes, etc. Here, we report on the fabrication of the high density Ge-dots/Si multilayered structure films combining LPCVD and Ni-based MILC processing. The present work is a promising fabrication method to obtain high quality Ge-dots/Si multilayered structure films

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006