By Topic

Effects of Ambient Conditions in Thermal Treatment for Ge

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Ge-MISFETs have attracted much attention as next generation MOSFETs because of their higher carrier mobility than Si-MOSFETs. However, it has been regarded as extremely difficult to form a gate stack structure with good quality because surfaces of Ge and the oxide films are very unstable thermally and chemically. Therefore, establishment of a surface passivation technique is one of the most important issues for realizing Ge-MISFETs. Although Ge-MIS structures that use GeON and high-k materials as the gate insulator, the interface trap density has been still high, compared with Si-MOS structures. Moreover, the measurement method of the interface trap density in the Ge-MIS structures has not been established yet. In this study, the influence of ambient conditions in Ge surface treatment was examined through the fabrication and electrical characterization of Ge-MIS capacitors

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006