By Topic

Temperature-Dependent Admittance Analysis of HfO2 Gate Dielectrics on Nitrogen- and Sulfur-Passivated Ge

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Koester, S.J. ; T. J. Watson Res. Center, IBM, Yorktown Heights, NY ; Frank, M.M. ; lsaacson, D.M. ; Hulling Shang

In this work, we characterize MOS capacitors with HfO2 gate dielectrics that utilize sulfur (S) passivation formed by pre-treatment of the Ge surface in an aqueous (NH4)2 S solution before HfO2 deposition, and compare the results with those using the more-standard N-passivation. Using temperature-dependent admittance measurements, we find that the S-passivated samples have lower minimum Dit and reduced flat-band shift, but also display larger accumulation dispersion and hysteresis than N-passivated samples. Results of admittance spectroscopy analysis also suggest that the energy distributions of the interface states are fundamentally different in the two sample types

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006