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Fast Ge p-i-n Photodetectors on Si

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5 Author(s)
E. Kasper ; Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany. Phone. +49 71 16 85 80 04 ; M. Oehme ; J. Werner ; M. Jutzi
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We report about a top-side illuminated Ge photodetector, which is appropriate for transmission of high-speed data at infrared telecommunication wavelengths and is monolithically integrated on a standard Si substrate (Jutzi et al., 2005) for 1552 nm operation. A 3-dB-bandwidth of 38.9 GHz is achieved for a 10 mum diameter detector and a reverse bias of 2 V. These results demonstrate the potential of SiGe photodiodes for Si based optical links at data rates up to 40 Gbit/s and beyond

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006