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III-V/Si Device Integration Via Metamorphic SiGe Substrates

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5 Author(s)
S. A. Ringel ; Dept. Of Electrical and Computer Engineering, 2015 Neil Ave., Columbus, OH 43210, USA. Phone: 1-614-292-6904 E-mail: ; Ojin Kwon ; M. Lueck ; J. Boeckl
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This paper presents growth, characterization and device results for III-V optoelectronic and solar cell heterostructure devices that have been monolithically integrated on Si via ultra low dislocation density SiGe interlayers. Prior work that has demonstrated high performance single junction solar cells (Andre et al., 2005) and visible wavelength LEDs (Kwon et al., 2005) on Si is extended here to include visible wavelength laser diodes and dual junction solar cells on Si in which AlGaInP materials are used as active layers on Si

Published in:

2006 International SiGe Technology and Device Meeting

Date of Conference:

15-17 May 2006