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Performance and Reliability of SiGe Photodetectors

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4 Author(s)
Morse, M. ; Mission Coll. Blvd, Santa Clara, CA ; Dosunmu, F. ; Chetrit, Y. ; Sarid, G.

The raw performance of normal incidence Ge on Si detectors has been found to be close to that of GaAs devices in optical properties at 850nm. In addition the leakage current is nearing that needed for many applications. Further receiver data that quantifies this is presented at the talk

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006