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Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon

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3 Author(s)
Harris, J.S. ; Solid State & Photonics Lab., Stanford Univ., CA ; Yu-Hsuan Kuo ; Miller, D.A.B.

We have demonstrated efficient QCSE in silicon-based structures, using strained Ge MQWs. The behavior of the exciton peaks, the band edge shift and the shift in absorption coefficient are comparable to those observed in III-V materials at similar wavelengths. Our materials and fabrication processes are completely CMOS compatible and suitable for mass production. This approach is therefore very promising for silicon-based electro-absorption modulators operating at high speed, low power, and low operating voltage and with small device areas

Published in:

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Date of Conference:

15-17 May 2006